Micron Technology DRAM SDRAM-DDR3, Part #: MT47H64M8SH-25E:H TR | Dynamic random access memory | DEX
Micron Technology DRAM SDRAM-DDR3, Part #: MT47H64M8SH-25E:H TR | Dynamic random access memory | DEX
-70% Off$1.67
Description
Micron Technology DRAM SDRAM-DDR2, Part #: MT47H64M8SH-25E:H TR features: • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Duplicate output strobe (RDQS) option for x8 • DLL to align DQ and DQS transitions with CK • 4 internal banks for concurrent operation • Programmable CAS latency (CL) • Posted CAS additive latency (AL) • WRITE latency = READ latency – 1 t CK • Selectable burst lengths: 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination (ODT) • Industrial temperature (IT) option • RoHS-compliant • Supports JEDEC clock jitter specification
MIL:MT47H64M8SH-25E H TR
MT47H64M8SH-25E:H TR
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