Micron Technology DRAM SDRAM-DDR4, Part #MT40A256M16LY-075:F TR

Features

• VDD = VDDQ = 1.2V ±60mV
• VPP = 2.5V, –125mV/+250mV
• On-die, internal, adjustable VREFDQ generation
• 1.2V pseudo open-drain I/O
• TC maximum up to 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C
• 16 internal banks (x4, x8): 4 groups of 4 banks each
• 8 internal banks (x16): 2 groups of 4 banks each
• 8n-bit prefetch architecture
• Programmable data strobe preambles
• Data strobe preamble training 
• Command/Address latency (CAL)
• Multipurpose register READ and WRITE capability
• Write leveling
• Self refresh mode
• Low-power auto self refresh (LPASR)
• Temperature controlled refresh (TCR)
• Fine granularity refresh
• Self refresh abort
• Maximum power saving
• Output driver calibration
• Nominal, park, and dynamic on-die termination (ODT)
• Data bus inversion (DBI) for data bus
• Command/Address (CA) parity
• Databus write cyclic redundancy check (CRC)
• Per-DRAM addressability
• Connectivity test
• sPPR and hPPR capability
• JEDEC JESD-79-4 compliant

MIL:MT40A256M16LY-075:F TR

MT40A256M16LY-075:F TR